(7 0
Ω
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1587
–160
–150
–5
–8
–1
75(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1587
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–6A
I
C
=–6A, I
B
=–6mA
I
C
=–6A, I
B
=–6mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
2SB1587
–100
max
–100
max
–150
min
5000
min
∗
–2.5
max
–3.0
max
65
typ
160
typ
V
V
pF
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2438)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
10
I
C
(A)
–6
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–6
I
B2
(mA)
6
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
3.6typ
t
f
(
µ
s)
0.9typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
m
A
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo l ta ge V
C E (s a t)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–8
( V
C E
=– 4 V )
–2
–8
mA
.5
–10
m
–2.0
A
– 1 .8 m
A
A
– 1 .5 m
–1 .3m A
–1 .0 m A
–0.8 mA
C o l l e c t o r Cu r r e n t I
C
( A)
C o l l ec t or C u r r e n t I
C
( A)
–6
–6
–2
–8A
–6A
I
C
= –4 A
–4
–0.5 mA
–4
p)
(Ca
se T
emp
)
(Ca
se T
emp
)
Tem
˚C
–2
–2
(Ca
se
I
B
=–0.3mA
–1
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C
125
25˚C
–2
C o l l ect o r - Em i t t er V ol ta ge V
C E
( V)
Bas e C ur r e nt I
B
( m A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= – 4 V)
40,000
D C C u r r e nt Ga i n h
FE
D C C u r r e n t G ai n h
F E
50000
12 5˚ C
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
25 ˚ C
10000
– 30 ˚ C
5000
10,000
1
5,000
0.5
2,000
–0.2
–0 . 5
–1
C ol l e ct o r C u rren t I
C
(A )
–5
–8
1000
–0.2
0.2
– 0. 5
–1
–5
–8
1
5
10
5 0 10 0
Time t(ms)
5 0 0 1 0 00
3.0
–3
20 0 0
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
100
–20
–10
C ut- off F r e q u e n c y f
T
(M H
Z
)
80
Co lle cto r Cu r r e nt I
C
( A )
Safe Operating Area
(Single Pulse)
80
10
0m
s
P c – Ta Derating
m
s
–5
Typ
60
D
M a xim u m P o w e r D i s s i p a t i o n P
C
( W )
10
C
60
W
ith
In
fin
ite
he
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
40
at
si
nk
40
20
20
0
0.02
0.05
0.1
0. 5
1
5
8
– 0 .0 5
–2
–5
–10
– 50
– 10 0
–2 00
3.5
0
W i t h o ut H e at s i n k
0
25
50
75
10 0
125
150
Em i t t er C urre nt I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
49
Embedded System
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