(7 0
Ω
) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1647
–150
–150
–5
–15
–1
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1647
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
2SB1647
–100
max
–100
max
–150
min
5000
min
∗
–2.5
max
–3.0
max
45
typ
320
typ
V
V
MHz
pF
20.0min
4.0max
2
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2560)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–15
–2
m
A
–1.5mA
V
CE
(sat ) – I
B
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t age V
C E (s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–15
( V
C E
=– 4 V )
–50mA
–10mA
–3mA
–1 .0 m A
C ol l e c t o r C ur r en t I
C
( A )
–0. 8m A
C o l l ec t or C u r r e n t I
C
( A)
–10
–0 .5m A
–2
–10
Tem
p)
I
C
=–15 A
se T
emp
I
C
=–1 0A
I
C
= – 5A
)
(Ca
I
B
=–0.3m A
125
˚C
–5
–1
–5
25˚C
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C (
C
ase
T
(Ca
emp
)
se
–2
–3
Co l l ect o r - Em i tte r V ol ta ge V
C E
(V)
B as e C ur r en t I
B
( m A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
50,000
D C C u r r e n t G ai n h
FE
(V
C E
= – 4 V )
50000
D C C u r r e n t G ai n h
FE
12 5˚ C
25 ˚ C
10000
5000
–3 0˚ C
( V
C E
= – 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
1
10,000
5,000
0 .5
1,000
–0.2
–0 . 5
–1
Co l le ct o r C urre nt I
C
(A)
–5
–10 –15
1000
–0.2
–0 .5
–1
C ol l e ct or C u r r e nt I
C
( A)
–5
–1 0 – 1 5
0 .1
1
10
100
T i m e t( m s )
10 0 0 2 0 00
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
60
Safe Operating Area
(Single Pulse)
13 0
Pc – Ta Derating
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
C ut- off Fr e q u e n c y f
T
( M H
Z
)
10 0
W
ith
40
In
fin
ite
he
at
si
nk
50
20
0
0.02
0.0 5 0 . 1
0 .5
1
5
10
3. 5
0
W i t h o ut H e a ts i n k
0
25
50
75
1 00
125
150
Em i t t e r Cu rre nt I
E
(A )
A m bi en t T e m p e r a t ur e T a ( ˚ C )
54
Analogue and Mixed Signal
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