IRFC230 datasheet, PDF - EEWORLD Datasheet

IRFC230: DescriptionPower Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size29KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFC230 Overview

Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	International Rectifier （ Infineon ）
package instruction	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

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