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2SA671A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerInchange Semiconductor
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2SA671A Overview

Transistor

2SA671A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA671
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(SUS)
= -1.0V(Max)@ I
C
= -2.0A
·DC
Current Gain
: h
FE
= 35-320@ I
C
= -0.5A
·Complement
to Type 2SC1061
APPLICATIONS
·Designed
for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-50
-50
-4
-3
-6
-0.5
25
150
-55~150
UNIT
V
V
V
A
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website:www.iscsemi.cn

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2SA671A 2SA671C
Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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