IRF543 datasheet, PDF - EEWORLD Datasheet

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IRF543: Description25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size158KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRF543 Overview

25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF543 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	230 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	25 A
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	135 ns
Maximum opening time (tons)	133 ns

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IRF543 Related Products

	IRF543	IRF542	RACF102DFT33K2
Description	25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	Array/Network Resistor, Isolated, Metal Glaze/thick Film, 0.063W, 33200ohm, 25V, 1% +/-Tol, 250ppm/Cel, Surface Mount, 0404, CHIP, ROHS COMPLIANT
Is it Rohs certified?	incompatible	incompatible	conform to
Reach Compliance Code	not_compliant	not_compliant	compliant
ECCN code	EAR99	EAR99	EAR99
JESD-609 code	e0	e0	e3
Number of components	1	1	1
Number of terminals	3	3	4
Maximum operating temperature	175 °C	175 °C	155 °C
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR PACKAGE
Package form	FLANGE MOUNT	FLANGE MOUNT	SMT
surface mount	NO	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - with Nickel (Ni) barrier
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	-
Avalanche Energy Efficiency Rating (Eas)	230 mJ	230 mJ	-
Shell connection	DRAIN	DRAIN	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	80 V	100 V	-
Maximum drain current (Abs) (ID)	25 A	25 A	-
Maximum drain current (ID)	25 A	25 A	-
Maximum drain-source on-resistance	0.1 Ω	0.1 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-220AB	TO-220AB	-
JESD-30 code	R-PSFM-T3	R-PSFM-T3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power consumption environment	150 W	150 W	-
Maximum power dissipation(Abs)	150 W	150 W	-
Maximum pulsed drain current (IDM)	100 A	100 A	-
Certification status	Not Qualified	Not Qualified	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Maximum off time (toff)	135 ns	135 ns	-
Maximum opening time (tons)	133 ns	133 ns	-

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