2N6030E3 datasheet, PDF - EEWORLD Datasheet

2N6030E3: DescriptionPower Bipolar Transistor, 16A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size72KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6030E3 Overview

Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

Parameter Name	Attribute value
Objectid	8059220501
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	16 A
Collector-emitter maximum voltage	120 V
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON

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