VISHAY
BA779 / BA779S
Vishay Semiconductors
RF PIN Diodes - Single in SOT-23
Features
• Wide frequency range 10 MHz to 1 GHz
3
Applications
Current controlled HF resistance in adjustable
attenuators
1
2
16923
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BA779
BA779S
Type differentiation
V
R
= 30 V, Z
r
> 5 kΩ
V
R
= 30 V, Z
r
> 9 kΩ
Ordering code
BA779-GS18 or BA779-GS08
BA779S-GS18 or BA779S-GS08
Remarks
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Test condition
Symbol
V
R
I
F
Value
30
50
Unit
V
mA
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
Symbol
R
thJA
T
j
T
stg
Value
500
125
- 55 to + 125
Unit
K/W
°C
°C
Document Number 85532
Rev. 1.6, 09-Jul-04
www.vishay.com
1
BA779 / BA779S
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
Test condition
I
F
= 20 mA
V
R
= 30 V
f = 100 MHz, V
R
= 0
f = 100 MHz, I
F
= 1.5 mA
f = 100 MHz, V
R
= 0
I
F
= 10 mA, I
R
= 10 mA
BA779
BA779S
Part
Symbol
V
F
I
R
C
D
r
f
z
r
z
r
τ
5
9
4
Min
Typ.
Max
1
50
0.5
50
VISHAY
Unit
V
nA
pF
Ω
kΩ
kΩ
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
a - Typical Cross Modulation Distortion ( dB )
100
I
F
- Forward Current ( mA )
20
Π
- Circuit with 10 dB Attenuation
V
0
= 40 dBmV
f
1
= 100 MHz unmodulated
-20
-40
-60
-80
0
20
40
60
80
f
2
, modulated with 200 kHz, m = 100% (MHz)
10
T
amb
= 25°C
1
Scattering Limit
0.1
0
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
V
F
- Forward Voltage ( V )
95 9733
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
2
10000
r
f
- Differential Forward Resistance (
Ω
)
ı
1000
100
f > 20 MHz
T
j
= 25
°
C
10
1
0.001
0.01
0.1
1
10
95 9734
I
F
- Forward Current ( mA )
Figure 2. Differential Forward Resistance vs. Forward Current
www.vishay.com
2
Document Number 85532
Rev. 1.6, 09-Jul-04
BA779 / BA779S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85532
Rev. 1.6, 09-Jul-04
PCB Design
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