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2N6307

Description
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

2N6307 Overview

Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

2N6307 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)8 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)5 MHz
VCEsat-Max1 V
Base Number Matches1
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