AS4SD4M16A2-8 datasheet, PDF - EEWORLD Datasheet

AS4SD4M16A2-8: DescriptionSynchronous DRAM, 4MX16, 6.5ns, CMOS, PDSO54; Categorystorage storage; File Size3MB，49 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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AS4SD4M16A2-8 Overview

Synchronous DRAM, 4MX16, 6.5ns, CMOS, PDSO54

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micross
package instruction	TSOP, TSOP54,.46,32
Reach Compliance Code	compliant
Maximum access time	6.5 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	4194304 words
character code	4000000
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.19 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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