HTS80/10VG1 datasheet, PDF - EEWORLD Datasheet

HTS80/10VG1: DescriptionSilicon Controlled Rectifier, 80000mA I(T), 1000V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size88KB，1 Pages; ManufacturerHerrmann Kg

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HTS80/10VG1 Overview

Silicon Controlled Rectifier, 80000mA I(T), 1000V V(DRM)

Parameter Name	Attribute value
Maker	Herrmann Kg
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	25 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	100 mA
Maximum leakage current	15 mA
On-state non-repetitive peak current	1250 A
Maximum on-state voltage	2.13 V
Maximum on-state current	80000 A
Maximum operating temperature	125 °C
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	SCR

	HTS80/10VG1	HTS80/08VG1	HTS80/12VG1
Description	Silicon Controlled Rectifier, 80000mA I(T), 1000V V(DRM)	Silicon Controlled Rectifier, 80000mA I(T), 800V V(DRM)	Silicon Controlled Rectifier, 80000mA I(T), 1200V V(DRM)
Maker	Herrmann Kg	Herrmann Kg	Herrmann Kg
Reach Compliance Code	unknown	unknown	unknown
Nominal circuit commutation break time	25 µs	25 µs	25 µs
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V
Maximum holding current	100 mA	100 mA	100 mA
Maximum leakage current	15 mA	15 mA	15 mA
On-state non-repetitive peak current	1250 A	1250 A	1250 A
Maximum on-state voltage	2.13 V	2.13 V	2.13 V
Maximum on-state current	80000 A	80000 A	80000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Off-state repetitive peak voltage	1000 V	800 V	1200 V
surface mount	NO	NO	NO
Trigger device type	SCR	SCR	SCR

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