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HTS80/12VG1

Description
Silicon Controlled Rectifier, 80000mA I(T), 1200V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size88KB,1 Pages
ManufacturerHerrmann Kg
Download Datasheet Parametric Compare View All

HTS80/12VG1 Overview

Silicon Controlled Rectifier, 80000mA I(T), 1200V V(DRM)

HTS80/12VG1 Parametric

Parameter NameAttribute value
MakerHerrmann Kg
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time25 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage3 V
Maximum holding current100 mA
Maximum leakage current15 mA
On-state non-repetitive peak current1250 A
Maximum on-state voltage2.13 V
Maximum on-state current80000 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage1200 V
surface mountNO
Trigger device typeSCR

HTS80/12VG1 Related Products

HTS80/12VG1 HTS80/08VG1 HTS80/10VG1
Description Silicon Controlled Rectifier, 80000mA I(T), 1200V V(DRM) Silicon Controlled Rectifier, 80000mA I(T), 800V V(DRM) Silicon Controlled Rectifier, 80000mA I(T), 1000V V(DRM)
Maker Herrmann Kg Herrmann Kg Herrmann Kg
Reach Compliance Code unknown unknown unknown
Nominal circuit commutation break time 25 µs 25 µs 25 µs
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 150 mA 150 mA 150 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V
Maximum holding current 100 mA 100 mA 100 mA
Maximum leakage current 15 mA 15 mA 15 mA
On-state non-repetitive peak current 1250 A 1250 A 1250 A
Maximum on-state voltage 2.13 V 2.13 V 2.13 V
Maximum on-state current 80000 A 80000 A 80000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Off-state repetitive peak voltage 1200 V 800 V 1000 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
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