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MZ55C11

Description
SILICON ZENER DIODES
File Size167KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet View All

MZ55C11 Overview

SILICON ZENER DIODES

Certificate TH97/10561QM
Certificate TW00/17276EM
MZ55C3V0 ~ MZ55C200
V
Z
: 3.0 - 200 Volts
P
D
: 500 mW
FEATURES :
* Complete 3.0 to 200 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
SILICON ZENER DIODES
M1A
0.085(2.16)
0.075(1.91)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Power Dissipation (Note1)
Maximum Forward Voltage at I
F
=100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Note :
Symbol
P
D
V
F
R
ӨJA
T
J
T
STG
Value
500
1.0
300
- 65 to + 200
- 65 to + 200
Unit
mW
V
°C/W
°C
°C
(1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Page 1 of 2
Rev. 01 : December 7, 2007
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