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M5M465800DJ-6S

Description
Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, SOJ-32
Categorystorage    storage   
File Size256KB,37 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M465800DJ-6S Overview

Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, SOJ-32

M5M465800DJ-6S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeSOJ
package instructionSOJ, SOJ32,.44
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J32
JESD-609 codee0
length20.95 mm
memory density67108864 bit
Memory IC TypeFAST PAGE DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height3.55 mm
self refreshYES
Maximum standby current0.0003 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
(Rev. 1.0)
MITSUBISHI LSIs
M5M467400/465400DJ,DTP -5,-6,-5S,-6S
M5M467800/465800DJ,DTP -5,-6,-5S,-6S
M5M465160DJ,DTP -5,-6,-5S,-6S
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
PRELIMINARY
DESCRIPTION
The M5M467400/465400DJ,DTP is a 16777216-word by 4-bit, M5M467800/465800DJ,DTP is a 8388608-word by 8-bit, and
M5M465160DJ,DTP is a 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are
suitable for large-capacity memory systems with high speed and low power dissipation.
Some of contents are subject to change without notice.
FEATURES
Type name
M5M467400DXX-5,5S
M5M467800DXX-5,5S
M5M467400DXX-6,6S
M5M467800DXX-6,6S
M5M465400DXX-5,5S
M5M465800DXX-5,5S
M5M465400DXX-6,6S
M5M465800DXX-6,6S
Address
Power
RAS
OE
CAS
Cycle
access access access
access
dissipa-
time
tion
time
time
time
time
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
Type name
M5M465160DXX-5,5S
M5M465160DXX-6,6S
Power
Address
RAS
CAS
OE
Cycle
dissipa-
access access access
access
time
time
tion
time
time
time
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
50
60
50
60
13
15
13
15
25
30
25
30
13
15
13
15
90
110
90
110
300
250
390
325
50
60
13
15
25
30
13
15
90
110
420
390
XX=J,TP
Standard 32 pin SOJ, 32 pin TSOP (M5M467400Dxx/M5M465400Dxx/M5M467800Dxx/M5M465800Dxx)
Standard 50 pin SOJ, 50 pin TSOP (M5M465160Dxx)
Single 3.3
±
0.3V supply
Low stand-by power dissipation
1.8mW (Max)
LVCMOS input level
Low operating power dissipation
M5M467400Dxx-5,5S / M5M467800Dxx-5,5S
360.0mW (Max)
M5M467400Dxx-6,6S / M5M467800Dxx-6,6S
324.0mW (Max)
M5M465400Dxx-5,5S / M5M465800Dxx-5,5S
468.0mW (Max)
M5M465400Dxx-6,6S / M5M465800Dxx-6,6S
432.0mW (Max)
M5M465160Dxx-5,5S
504.0mW (Max)
M5M465160Dxx-6,6S
468.0mW (Max)
Self refresh capability*
Self refresh current
400µA (Max)
Fast-page mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities
Early-write mode and OE to control output buffer impedance
All inputs, outputs LVTTL compatible and low capacitance
*
:Applicable to self refresh version(M5M467400/465400/467800/465800/465160DJ,DTP-5S,-6S:option) only
ADDRESS
Part No.
Row Add. Col. Add.
Refresh
Refresh Cycle
Normal
S-version
RAS Only Ref,Normal R/W 8192/64ms 8192/128ms
M5M467400Dxx A0-A12
M5M465400Dxx A0-A11
M5M467800Dxx A0-A12
A0-A10
CBR Ref,Hidden Ref
4096/64ms 4096/128ms
A0-A11
RAS Only Ref,Normal R/W 4096/64ms 4096/128ms
CBR Ref,Hidden Ref
RAS Only Ref,Normal R/W 8192/64ms 8192/128ms
A0-A9
CBR Ref,Hidden Ref
4096/64ms 4096/128ms
M5M465800Dxx A0-A11 A0-A10
RAS Only Ref,Normal R/W 4096/64ms 4096/128ms
CBR Ref,Hidden Ref
M5M465160Dxx A0-A11 A0-A9
RAS Only Ref,Normal R/W
4096/64ms 4096/128ms
CBR Ref,Hidden Ref
APPLICATION
Main memory unit for computers, Microcomputer memory, Refresh memory for CRT
1
Aug. 1999
MITSUBISHI ELECTRIC
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