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SF15SGP1G

Description
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size369KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SF15SGP1G Overview

Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon

SF15SGP1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
SF11SG thru SF18SG
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Super Fast Rectifiers
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
20
100
- 55 to + 150
- 55 to + 150
0.95
5
100
35
10
O
SF
50
35
50
SF
100
70
100
SF
150
105
150
SF
200
140
200
1
30
SF
300
210
300
SF
400
280
400
SF
500
350
500
SF
600
420
600
11SG 12SG 13SG 14SG 15SG 16SG 17SG 18SG
UNIT
V
V
V
A
A
1.3
1.7
V
uA
uA
nS
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300u sec, 1% duty cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1401002
Version: F14
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