RBV1500D_05 datasheet, PDF - EEWORLD Datasheet

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RBV1500D_05: DescriptionSILICON BRIDGE RECTIFIERS; File Size88KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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RBV1500D_05 Overview

SILICON BRIDGE RECTIFIERS

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Certificate TH97/10561QM

Certificate TW00/17276EM

RBV1500D - RBV1510D

PRV : 50 - 1000 Volts

Io : 15 Amperes

SILICON BRIDGE RECTIFIERS

RBV25

3.9

±

0.2

C3

30

±

0.3

4.9

±

0.2

∅

3.2

±

0.1

20

±

0.3

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

High case dielectric strength of 2000 V

DC

Ideal for printed circuit board

Very good heat dissipation

Pb / RoHS Free

+

13.5

±

0.3

~ ~

11

±

0.2

1.0

±

0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 8.11 grams ( Approximaly )

10 7.5 7.5

±0.2 ±0.2 ±0.2

2.0

±

0.2

0.7

±

0.1

Dimensions in millimeters

Rating at 25

°C

ambient temperature unless otherwise specified .

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at I

F

= 15 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

Notes :

SYMBOL

RBV

1500D 1501D 1502D 1504D 1506D 1508D 1510D

50

35

50

100

70

100

200

140

200

400

280

400

15

300

375

1.1

10

200

1.5

- 40 to + 150

600

420

600

800

560

800

1000

700

1000

17.5

±

0.5

UNIT

V

A

2

S

V

μA

°C/W

°C

V

RRM

V

RMS

V

DC

I

F(AV)

I

FSM

I

2

t

V

F

I

R

I

R(H)

R

ӨJC

T

J

T

STG

Ta = 25

°C

Ta = 100

°C

1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.

Page 1 of 2

Rev. 04 : Decsember 12, 2005

RBV1500D_05 Related Products

	RBV1500D_05	RBV1500D	RBV1502D	RBV1501D	RBV1504D	RBV1506D	RBV1510D	RBV1508D
Description	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	-	compli	compli	compli	compli	compli	compli	compli
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1 V	1 V	1 V	1 V	1 V	1 V	1 V
Maximum non-repetitive peak forward current	-	300 A	300 A	300 A	300 A	300 A	300 A	300 A
Number of components	-	4	4	4	4	4	4	4
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	-	15 A	15 A	15 A	15 A	15 A	15 A	15 A
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	50 V	200 V	100 V	400 V	600 V	1000 V	800 V
surface mount	-	NO	NO	NO	NO	NO	NO	NO
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	1	1	1	1	1	1

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