Certificate TH97/10561QM
Certificate TW00/17276EM
RBV1500D - RBV1510D
PRV : 50 - 1000 Volts
Io : 15 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9
±
0.2
C3
30
±
0.3
4.9
±
0.2
∅
3.2
±
0.1
20
±
0.3
FEATURES :
*
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
+
13.5
±
0.3
~ ~
11
±
0.2
1.0
±
0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.11 grams ( Approximaly )
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0
±
0.2
0.7
±
0.1
Dimensions in millimeters
Rating at 25
°C
ambient temperature unless otherwise specified .
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 15 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
SYMBOL
RBV
RBV
RBV
RBV
RBV
RBV
RBV
1500D 1501D 1502D 1504D 1506D 1508D 1510D
50
35
50
100
70
100
200
140
200
400
280
400
15
300
375
1.1
10
200
1.5
- 40 to + 150
- 40 to + 150
600
420
600
800
560
800
1000
700
1000
17.5
±
0.5
UNIT
V
V
V
A
A
A
2
S
V
μA
μA
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
ӨJC
T
J
T
STG
Ta = 25
°C
Ta = 100
°C
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 04 : Decsember 12, 2005
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
18
HEAT-SINK MOUNTING, Tc
5" x 4" x 3" THK.
(12.7cm x 12.7cm x 7.3cm)
Al.-Finned plate
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
300
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
15
250
12
200
T
J
= 50
°C
9
150
6
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
3
50
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60
10
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
10
1.0
1.0
Pulse Width = 300
μs
1 % Duty Cycle
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
10
0
12
0
140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 04 : Decsember 12, 2005
Embedded System
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