EEWORLDEEWORLDEEWORLD

Part Number

Search

LBC847CLT3

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size356KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

LBC847CLT3 Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN

LBC847CLT3 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)420
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Nominal transition frequency (fT)100 MHz
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
3
COLLECT OR
MARKING DIAGRAM
xx M
LBC846ALT1
Series
3
1
B ASE
2
EMIT T ER
xx
M
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
VCBO
80
50
30
Symbol
VCEO
65
45
30
Value
= Device Code
=
(See Table)
= Date Code
1
2
SOT–23
Unit
Vdc
ORDERING INFORMATION
Vdc
Device
LBC846ALT1
Vdc
LBC846ALT3
LBC846BLT1
LBC846BLT3
mAdc
LBC847ALT1
LBC847BLT1
Package
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
Symbol
PD
Max
225
Unit
mW
LBC847CLT1
LBC847CLT3
1.8
R
qJA
PD
556
300
mW/°C
°C/W
mW
LBC848ALT1
LBC848BLT1
LBC848BLT3
LBC848CLT1
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW/°C
°C/W
°C
LBC849BLT1
LBC849CLT1
LBC850BLT1
LBC850CLT1
DEVICE MARKING
LBC846ALT1=
1A;
LBC846BLT1=
1B;
LBC847ALT1=
1E;
LBC847BLT1=
1F;
LBC847CLT1=
1G;
LBC848ALT1=
1J;
LBC848BLT1=
1K;
LBC848CLT1=
1L;
LBC849BLT1=
2B;
LBC849CLT1=
2C;
LBC850BLT1=
2F;
LBC850CLT1=
2G
1. FR–5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
Preferred
devices are recommended choices for future use
and best overall value.
LBC846ALT1–1/5

LBC847CLT3 Related Products

LBC847CLT3 LBC846ALT3 LBC848BLT3 LBC846BLT3
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN
Maker LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 420 110 200 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1149  1273  1284  1157  1334  24  26  27  40  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号