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RGP10A

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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RGP10A Overview

1 A, SILICON, SIGNAL DIODE

RGP10A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Diode typeRECTIFIER DIODE
RGP10A - RGP10M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY RECTIFIERS
DO - 41
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°
C
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A
Maximum Full load Reverse Current, Full Cycle Average
0.375",(9.5mm) Lead Length
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 55
°
C
Ta = 25
°
C
Ta = 150
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R(AV)
I
R
I
R(H)
Trr
RGP
10A
50
35
50
RGP
10B
100
70
100
RGP
10D
200
140
200
RGP
10G
400
280
400
1.0
30
1.3
100
5.0
200
RGP
10J
600
420
600
RGP
10K
800
560
800
RGP
10M
1000
700
1000
UNIT
V
V
V
A
A
V
µ
A
µ
A
µ
A
250
500
ns
pf
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Junction Temperature Range
Storage Temperature Range
150
15
50
- 65 to + 175
- 65 to + 175
C
J
R
θ
JA
T
J
T
STG
°
C/W
°
C
°
C
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
( 3 ) Thermal Resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005

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Description 1 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compliant compli compli compli compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
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