EEWORLDEEWORLDEEWORLD

Part Number

Search

SF69

Description
6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric Compare View All

SF69 Overview

6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

SF69 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Diode typeRECTIFIER DIODE
SF61 - SF69
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Super fast recovery time
Pb / RoHS Free
SUPER FAST
RECTIFIER DIODES
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA :
* Case : molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 6.0 A.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL SF61 SF62 SF63 SF64 SF65 SF66 SF67 SF68 SF69
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
6.0
400
280
400
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
150
0.95
5
50
35
50
- 65 to + 150
- 65 to + 150
1.7
4.0
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
Notes :
C
J
T
J
T
STG
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 04 : March 25, 2005

SF69 Related Products

SF69 SF61 SF62 SF63 SF65 SF64 SF66 SF67 SF68
Description 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,200V V(RRM),AXIAL-9.1 6 A, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Reach Compliance Code compli compli compli compli compli compli compli compli compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2383  2630  2726  875  2212  48  53  55  18  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号