SCH1434
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=2A
VDS=10V, VGS=4.5V, ID=2A
VDS=10V, VGS=4.5V, ID=2A
IS=2A, VGS=0V
0.4
2.0
125
165
250
130
21
14
4.4
8.7
16
12
1.7
0.25
0.38
0.85
1.2
165
235
375
Ratings
min
30
1
±10
1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=15V
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=1A
RL=15Ω
VOUT
P.G
50Ω
S
SCH1434
7.0V
4.
5V
3.5V
2.5V
2.0
1.8
1.6
ID -- VDS
1.8
V
2.0
1.8
1.6
ID -- VGS
VDS=10V
Drain Current, ID -- A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Drain Current, ID -- A
1.4
1.2
1.0
0.8
1.5V
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.5
1.0
25
°
C
1.5
VGS=1.2V
0.2
Ta=
7
--25
°
C
0.6
5
°
C
2.0
2.5
IT14138
Drain-to-Source Voltage, VDS -- V
IT14137
Gate-to-Source Voltage, VGS -- V
No. A1891-2/4
SCH1434
450
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=0.3A
0.5A
1A
450
400
350
300
250
200
150
100
50
0
--60
--40
--20
0
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
350
300
250
200
150
100
50
0
0
1
2
A
=0.3
8V, I D
=1.
VGS
A
=0.5
5V, I D
=2.
.0A
VGS
I =1
4.5V, D
V GS=
3
4
5
6
7
8
9
10
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
|
y
fs
|
-- ID
IT14139
5
Ambient Temperature, Ta --
°
C
IS -- VSD
IT14140
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
3
2
3
2
VGS=0V
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
1.0
7
5
3
2
5
°
C
--2
=
C
Ta
75
°
°
C
25
0.1
7
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
0.01
0
0.2
Ta=7
5
°
C
25
°
C
--25
°
C
0.4
0.6
0.8
1.0
1.2
IT14142
Drain Current, ID -- A
7
5
SW Time -- ID
IT14141
7
5
3
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD=15V
VGS=4.5V
Ciss, Coss, Crss -- pF
f=1MHz
Switching Time, SW Time -- ns
3
2
2
td(off)
Ciss
100
7
5
3
2
10
7
5
10
7
5
tf
tr
td(on)
Coss
Crss
3
2
0.1
2
3
5
7
2
3
5
7
1.0
10
0
5
10
15
20
25
30
IT14144
Drain Current, ID -- A
4.5
4.0
3.5
VGS -- Qg
IT14143
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=2A
Drain Current, ID -- A
IDP=8A (PW
≤
10
μs)
ID=2A
10
10
0
μ
s
1m
s
ms
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
DC
10
0
op
e
ms
Operation in this
area is limited by RDS(on).
rat
ion
0.01
0.1
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
IT14145
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16154
No. A1891-3/4
SCH1434
1.2
PD -- Ta
When mounted on ceramic substrate
(900mm
2
×0.8mm)
Allowable Power Dissipation, PD -- W
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16155
Note on usage : Since the SCH1434 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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PS No. A1891-4/4
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