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BYV118-20

Description
DIODE 20 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size46KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYV118-20 Overview

DIODE 20 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode

BYV118-20 Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current55 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV116, BYV116B series
SYMBOL
QUICK REFERENCE DATA
V
R
= 20 V/ 25 V
I
O(AV)
= 10 A
V
F
0.54 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package.
The BYV116B series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV118-
BYV116B-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
124 ˚C
square wave;
δ
= 0.5; T
mb
123 ˚C
square wave;
δ
= 0.5; T
mb
123 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
20
20
20
20
20
10
10
50
55
1
150
175
MAX.
25
25
25
25
25
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000

BYV118-20 Related Products

BYV118-20 BYV118-25
Description DIODE 20 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode DIODE 25 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode
Maker NXP NXP
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 55 A 55 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 20 V 25 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
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