BYV28-200/41113 datasheet, PDF

BYV28-200/41113: DescriptionDIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size221KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYV28-200/41113 Overview

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	ULTRA FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.02 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	90 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3.5 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.025 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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