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RB151

Description
1.5 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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RB151 Overview

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

RB151 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PSIP-W4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature140 °C
Minimum operating temperature-40 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
RB150 - RB158
PRV : 50 - 800 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
*
*
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
RB
0.71 (18.0)
0.63 (16.0)
0.825 (20.95)
0.605 (15.36)
AC
+
AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01)
0.236 (5.99)
0.500 (12.7)
MIN.
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.105 (2.66)
0.085 (2.16)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage per Diode at I
F
= 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note :
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
R
θ
JL
T
J
T
STG
RB150
50
35
50
RB151
100
70
100
RB152
200
140
200
RB154
400
280
400
RB156
600
420
600
RB158
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
°C/W
°C
°C
1.5
40
0.95
10
100
15
- 40 to + 140
- 40 to + 140
Ta = 25
°C
Ta = 100
°C
1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads.
Page 1 of 2
Rev. 02 : March 24, 2005

RB151 Related Products

RB151 RB150 RB150_05 RB152 RB154 RB156 RB158
Description 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Lead free Lead free - Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to - conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
package instruction R-PSIP-W4 R-PSIP-W4 - R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
Reach Compliance Code compli compli - compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 100 V 50 V - 200 V 400 V 600 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V - 0.95 V 0.95 V 0.95 V 0.95 V
JESD-30 code R-PSIP-W4 R-PSIP-W4 - R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
Maximum non-repetitive peak forward current 40 A 40 A - 40 A 40 A 40 A 40 A
Number of components 4 4 - 4 4 4 4
Phase 1 1 - 1 1 1 1
Number of terminals 4 4 - 4 4 4 4
Maximum operating temperature 140 °C 140 °C - 140 °C 140 °C 140 °C 140 °C
Minimum operating temperature -40 °C -40 °C - -40 °C -40 °C -40 °C -40 °C
Maximum output current 1.5 A 1.5 A - 1.5 A 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE - IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 50 V - 200 V 400 V 600 V 800 V
surface mount NO NO - NO NO NO NO
Terminal form WIRE WIRE - WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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