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MMSD103T1_10

Description
High Voltage Switching Diode
File Size90KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

MMSD103T1_10 Overview

High Voltage Switching Diode

MMSD103T1
High Voltage Switching
Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
1
Cathode
2
Anode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
250
200
625
Unit
V
mA
mA
2
1
THERMAL CHARACTERISTICS
Characteristic
Forward Power Dissipation, FR−5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
F
Value
400
3.2
174
492
−55
to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
SOD−123
CASE 425
STYLE 1
R
qJL
R
qJA
T
J,
T
stg
MARKING DIAGRAM
JS M
G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0

0.75

0.062 in.
JS = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSD103T1G
Package
SOD−123
(Pb−Free)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
July, 2010
Rev. 5
1
Publication Order Number:
MMSD103T1/D
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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