NDS9959/S62Z datasheet, PDF - EEWORLD Datasheet

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NDS9959/S62Z: Description2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size161KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDS9959/S62Z Overview

2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

NDS9959/S62Z Parametric

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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	NDS9959/S62Z	NDS9959/L86Z	NDS9959	NDS9959/L99Z	NDS9959/D84Z
Description	2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V	50 V	50 V
Maximum drain current (ID)	2 A	2 A	2 A	2 A	2 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω	0.3 Ω	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF	25 pF	25 pF	25 pF	25 pF
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	2	2	2	2	2
Number of terminals	8	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Texas Instruments	Texas Instruments	-	Texas Instruments	Texas Instruments
Maximum pulsed drain current (IDM)	-	8 A	8 A	-	8 A
Maximum off time (toff)	-	170 ns	170 ns	-	170 ns
Maximum opening time (tons)	-	110 ns	110 ns	-	110 ns

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