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NDS9959

Description
2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size161KB,6 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NDS9959 Overview

2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

NDS9959 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)25 pF
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)170 ns
Maximum opening time (tons)110 ns
Base Number Matches1

NDS9959 Related Products

NDS9959 NDS9959/L86Z NDS9959/L99Z NDS9959/D84Z NDS9959/S62Z
Description 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V 50 V 50 V 50 V
Maximum drain current (ID) 2 A 2 A 2 A 2 A 2 A
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω 0.3 Ω 0.3 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 25 pF 25 pF 25 pF 25 pF 25 pF
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 2 2 2 2 2
Number of terminals 8 8 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maximum pulsed drain current (IDM) 8 A 8 A - 8 A -
Maximum off time (toff) 170 ns 170 ns - 170 ns -
Maximum opening time (tons) 110 ns 110 ns - 110 ns -
Maker - Texas Instruments Texas Instruments Texas Instruments Texas Instruments

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