2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (Abs) (ID) | 2 A |
| Maximum drain current (ID) | 2 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e0 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 2 W |
| Maximum pulsed drain current (IDM) | 8 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 170 ns |
| Maximum opening time (tons) | 110 ns |
| Base Number Matches | 1 |
| NDS9959 | NDS9959/L86Z | NDS9959/L99Z | NDS9959/D84Z | NDS9959/S62Z | |
|---|---|---|---|---|---|
| Description | 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| package instruction | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Maximum drain current (ID) | 2 A | 2 A | 2 A | 2 A | 2 A |
| Maximum drain-source on-resistance | 0.3 Ω | 0.3 Ω | 0.3 Ω | 0.3 Ω | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF |
| JESD-30 code | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| Number of components | 2 | 2 | 2 | 2 | 2 |
| Number of terminals | 8 | 8 | 8 | 8 | 8 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum pulsed drain current (IDM) | 8 A | 8 A | - | 8 A | - |
| Maximum off time (toff) | 170 ns | 170 ns | - | 170 ns | - |
| Maximum opening time (tons) | 110 ns | 110 ns | - | 110 ns | - |
| Maker | - | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |