PD57002-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Datasheet — production data
Features
■
■
■
■
Excellent thermal stability
Common source configuration
P
OUT
= 2 W with 15dB gain @ 960 MHz / 28 V
New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 1
GHz. The device is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for digital cellular
BTS applications requiring high linearity. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performance and ease of assembly.
PowerSO-10RF
(formed lead)
Figure 1.
Pin connection
Source
Gate
Drain
Table 1.
Device summary
Order code
PD57002-E
Package
PowerSO-10RF (formed lead)
Packing
Tube
May 2012
This is information on a product in full production.
Doc ID 12332 Rev 4
1/19
www.st.com
19
Contents
PD57002-E
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
6
7
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
Doc ID 12332 Rev 4
Electrical characteristics
PD57002-E
2
Electrical characteristics
T
CASE
= +25
o
C
2.1
Static
Table 4.
Symbol
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0
V
GS
= 20 V
V
DS
= 28 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0
V
GS
= 0
V
GS
= 0
Static
Test conditions
V
DS
= 28 V
V
DS
= 0
I
D
= 10 mA
I
D
= 125 mA
I
D
= 200 mA
V
DS
= 28 V
V
DS
= 28 V
V
DS
= 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
2.0
0.7
--
7.1
5.8
0.1
Min
Typ
Max
1
1
5.0
0.9
Unit
µA
µA
V
V
mho
pF
pF
pF
2.2
Dynamic
Table 5.
Symbol
P
1dB
G
P
h
D
V
DD
= 28 V,
V
DD
= 28 V,
V
DD
= 28 V,
Dynamic
Test conditions
I
DQ
= 10 mA f = 960 MHz
I
DQ
= 10 mA,
I
DQ
= 10 mA,
P
OUT
= 2 W, f = 960 MHz
P
OUT
= 2 W,
P
OUT
= 2W,
f = 960 MHz
f = 960 MHz
Min
2
15
45
10:1
Typ
Max
Unit
W
dB
%
VSWR
Load
V
DD
= 28 V, I
DQ
= 10 mA,
mismatch All phase angles
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
4/19
Doc ID 12332 Rev 4
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