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BLS3135-10

Description
Microwave power transistor
CategoryDiscrete semiconductor    The transistor   
File Size70KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BLS3135-10 Overview

Microwave power transistor

BLS3135-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT
package instructionHERMETIC SEALED, CERAMIC, SOT-445C, 2 PIN
Contacts2
Manufacturer packaging codeSOT445C
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Shell connectionBASE
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)34 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS3135-10
Microwave power transistor
Product specification
2000 Feb 01
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