CY27S03DMB datasheet, PDF - EEWORLD Datasheet

CY27S03DMB: DescriptionStandard SRAM, 16X4, 35ns, CMOS, CDIP16, 0.300 INCH, CERDIP-16; Categorystorage storage; File Size267KB，5 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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CY27S03DMB Overview

Standard SRAM, 16X4, 35ns, CMOS, CDIP16, 0.300 INCH, CERDIP-16

Parameter Name	Attribute value
Maker	Rochester Electronics
package instruction	DIP,
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	35 ns
Other features	INVERTED OUTPUT
JESD-30 code	R-GDIP-T16
length	19.431 mm
memory density	64 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	16
word count	16 words
character code	16
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16X4
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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