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2N835

Description
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size329KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N835 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

2N835 Parametric

Parameter NameAttribute value
Parts packaging codeBCY
package instructionTO-18, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)35 ns
Maximum opening time (tons)20 ns
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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