1 Megabit (128K x 8-Bit) -
OTP EPROM
A5
27C010T
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
32
V
CC
PGM
NC
A14
A13
A8
A9
A9
X-Decoder
A12
A16
1024 x 1024
Memory Matrix
I/O0
I/O7
Input
Data
Control
Y-Gating
Y-Decoder
27C010T
A11
OE
A10
CE
CE
I/O7
OE
I/O6
PGM
A0-A4
V
CC
V
PP
H
H
: High Threshold Inverter
A10-A11
I/O5
I/O4
16
17
I/O3
Memory
V
SS
Logic Diagram
F
EATURES
:
• 128k x 8 Bit OTP EPROM organization
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- >100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 80 MeV/mg/cm
2
- SEU
TH
LET (read mode): >80 Mev/mg/cm
2
• Package:
- 32 pin R
AD
-P
AK
® flat pack
- Weight - 6.0 grams
• Fast access time:
- 120, 150, 200 ns (max) times available
• Low power consumption:
- Active mode: 50 mW/MHz (typ)
- Standby mode: 5µW (typ)
• High speed page and word programming:
- Page programming time: 14 sec (typ)
• Programming power supply:
- V
PP
= 12.5 V ± 0.3 V
• One-time Programmable
• Pin Arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies
’ 27C010T high density 1 Megabit
One-time Programmable Electrically Programmable Read
Only Memory microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C010T features fast address times and low power dissipa-
tion. The 27C010T offers high speed programming using page
programming mode. The 27C010T is offered in JEDEC-Stan-
dard Byte-Wide EPROM pinouts, which allows socket replace-
ment with Flash Memory and Mask ROMs.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
12.12.01 Rev 2
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
T
ABLE
1. 27C010T P
INOUT
D
ESCRIPTION
P
IN
12-5, 27, 26, 23, 25,
4, 28, 29, 3 ,2
22
24
32
1
16
31
30
S
YMBOL
A0 - A16
I/O0 - I/O7
CE
OE
V
CC
V
PP
V
SS
PGM
NC
D
ESCRIPTION
Address
Input/Output
Chip Enable
Output Enable
Power Supply
Programming Supply
Ground
Programming Enable
No Connection
27C010T
Memory
T
ABLE
2. 27C010T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
1
Programming Voltage
1
All Input and Output Voltage
1,2
A9 Voltage
2
Operating Temperature Range
Storage Temperature Range
1. Relative to V
SS
.
2. V
IN
, V
OUT
, and V
ID
min = -1.0V for pulse width < 20 ns.
S
YMBOL
V
CC
V
PP
V
IN
, V
OUT
V
ID
T
A
T
S
M
IN
-0.6
-0.6
-0.6
-0.6
-55
-65
M
AX
7.0
13.5
7.0
13.0
+125
+150
U
NIT
V
V
V
V
°
C
°
C
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC
1
I
CC
2
I
CC
3
ISB
V
ARIATION
±10% of value specified on Table 6
±10% of value specified on Table 6
±10% of value specified on Table 6
±10% of value specified on Table 6
12.12.01 Rev 2
All data sheets are subject to change without notice
2
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
T
ABLE
4. 27C010T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
Thermal Impedance
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns.
2. V
IH
max = V
CC
+ 1.5V for pulse width < 20 ns.
S
YMBOL
V
CC
V
IL
V
IH
T
A
M
IN
4.5
-0.3
1
2.2
--
-55
27C010T
M
AX
5.5
0.8
V
CC
+1
2
1.27
+125
°C/W
°
C
U
NITS
V
V
Θ
JC
T
ABLE
5. 27C010T C
APACITANCE 1
P
ARAMETER
Input Capacitance
Output Capacitance
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
M
AX
10
15
U
NIT
pF
pF
Memory
T
ABLE
6. 27C010T DC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION
(V
CC
= 5V ± 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
S
YMBOL
I
LI
I
LO
I
SB
I
CC1
I
CC2
I
CC3
V
PP
Current
Input Voltage
Output Voltage
I
PP1
V
IH
V
IL
V
OH
V
OL
I
OH
= -400 µA
I
OL
= 2.1 mA
T
EST
C
ONDITION
V
IN
= 5.5V
V
OUT
= 5.5V/0.45V
CE = V
IH
I
OUT
= 0 mA, CE = V
IL
I
OUT
= 0 mA, f = 5 MHz
I
OUT
= 0 mA, f = 10 MHz
V
PP
= 5.5V
S
UB
G
ROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
M
IN
--
--
--
--
--
--
--
2.2
--
2.4
--
T
YP
--
--
--
--
--
--
1
--
--
--
--
M
IN
2
2
1
30
30
50
20
--
0.8
--
0.45
V
µA
V
U
NIT
µA
µA
mA
mA
12.12.01 Rev 2
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
T
ABLE
7. 27C010T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V ± 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Access Time
- 120
- 150
- 200
Chip Enable Access Time
- 120
- 150
- 200
Output Enable Access TIme
- 120
- 150
- 200
Output Hold to Address Change
- 120
- 150
- 200
Output Disable to High-Z
2
- 120
- 150
- 200
T
EST
C
ONDITION
CE = OE = V
IL
S
YMBOL
t
ACC
S
UB
G
ROUPS
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
0
0
0
9, 10, 11
0
0
0
50
50
50
--
--
--
ns
60
70
70
ns
120
150
200
ns
120
150
200
ns
M
IN
M
AX
U
NIT
ns
OE = V
IL
t
CE
CE = V
IL
t
OE
CE = V
IL
t
OH
Memory
CE = OE = V
IL
t
DF
1. Test conditions:
- Input pulse levels 0.45V/2.4V
- Input rise and fall times
<
10 ns
- Output load 1 TTL gate + 100 pF (including scope and jig)
- Referenced levels for measuring timing 0.8V/2.0V
2. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
12.12.01 Rev 2
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
T
ABLE
8. 27C010T DC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2,3,4
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
°
C)
P
ARAMETER
Input Leakage Current
Operating V
CC
Current
Operating V
PP
Current
Input Voltage
5
Output Voltage
S
YMBOL
I
LI
I
CC
I
PP
V
IH
V
IL
V
OH
V
OL
I
OH
= -400 µA
I
OH
= 2.1 mA
CE = PGM = V
IL
T
EST
C
ONDITION
V
IN
= 0V to V
CC
S
UB
G
ROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
M
IN
--
--
--
2.2
-0.1
7
2.4
--
M
AX
2
30
40
V
CC
+5
6
0.8
--
0.45
V
U
NIT
µA
mA
mA
V
1. V
CC
must be applied before V
PP
and removed after V
PP
.
2. V
PP
must not exceed 13V, inlcuding overshoot.
3. Do not change V
PP
from V
IL
to 12.5V or 12.5V to V
IL
when CE =LOW.
4. DC electrical paramters for programming operations are not tested. These parameters are guaranteed by design.
5. Device reliability may be adversely affected if the device is installed or removed while V
PP
= 12.5V.
6. If V
IH
is over the specified maximum value, programming operation can not be guaranteed.
7. V
IL
min = -0.6V for pulse width < 20 ns.
Memory
T
ABLE
9. 27C010T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V ± 0.3V, T
A
= 25
°
C)
P
ARAMETER
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Chip Enable Setup TIme
V
PP
Setup Time
V
CC
Setup Time
Output Enable Setup Time
Output Disable Time
PGM Initial Programming Pulse Width
PGM Overprogramming Pulse Width
Data Valid from Output Enable Time
Output Enable Pulse During Data Latch
Output Enable Hold Time
Chip Enable Hold Time
S
YMBOL
t
AS
t
AH
t
DS
t
DH
t
CES
t
VPS
t
VCS
t
OES
t
DF
t
PW
t
OPW
t
OE
t
LW
t
OEH
t
CEH
S
UB
G
ROUPS
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
12.12.01 Rev 2
M
IN
2
0
2
2
2
2
2
2
0
0.19
0.19
0
1
2
2
T
YP
--
--
--
--
--
--
--
--
--
0.20
--
--
--
--
--
M
AX
--
--
--
--
--
--
--
--
130
0.21
5.25
150
--
--
--
U
NIT
µs
µs
µs
µs
µs
µs
µs
µs
ns
ms
ms
ns
µs
µs
µs
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies
All rights reserved.
NXP MCU
京公网安备 11010802033920号
EEWORLD
