Small Signal General
Purpose Transistors (NPN)
2N3903/2N3904
Small Signal General Purpose Transistors (NPN)
Features
•
NPN Silicon Epitaxial Transistor for Switching and
Amplifier Applications
•
RoHS Compliance
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Maximum Ratings
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
A
=25°C
2N3903
40
60
6.0
200
625
5.0
1.5
12
200
83.3
-55 to +150
2N3904
Unit
V
V
V
mA
mW
mW/° C
W
mW/° C
° C/W
° C/W
°C
V
CEO
V
CBO
V
EBO
I
C
P
D
Derate above 25°C
Power Dissipation at T
C
=25°C
P
D
Derate above 25°C
R
θJA
R
θJC
T
J
,T
STG
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Case
Operation and Storage Junction Temperature
Range
TAITRON COMPONENTS INCORPORATED
www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Emitter Saturation Voltage
2N3903
Min.
60
40
6.0
-
-
Base Emitter Saturation Voltage
Collector Cut–Off Current
Base Cut–Off Current
0.65
-
-
-
20
35
Max.
-
-
-
0.2
0.3
0.85
0.95
50
50
-
-
150
-
-
200
8.0
5.0
40
-
4.0
8.0
6.0
35
35
175
50
2N3904
Min.
60
40
6.0
-
-
0.65
-
-
-
40
70
100
60
30
100
1.0
0.5
1.0
300
-
-
-
-
-
-
-
Max.
-
-
-
0.2
0.3
0.85
0.95
50
50
-
-
300
-
-
400
10
8.0
40
-
4.0
8.0
5.0
35
35
200
50
kΩ
x10־
μS
MHz
pF
pF
dB
nS
nS
nS
nS
4
Unit
V
V
V
V
Conditions
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
*
V
BE(sat)
*
I
CEX
I
BL
V
nA
nA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
EB
=3V, V
CE
=30V
V
EB
=3V, V
CE
=30V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
V
CE
=10V, I
C
=1mA
f=1KHz
V
CE
=10V, I
C
=1mA
f=1KHz
V
CE
=10V, I
C
=1mA
f=1KHz
V
CE
=10V, I
C
=1mA
f=1KHz
V
CE
=20V, I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0
f=1MHz
V
EB
=0.5V, I
C
=0
f=1MHz
V
CE
=5V, I
C
=100µA,
Rs=1KΩ, f=1KHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2=
1mA
h
FE
*
D.C. Current Gain
50
30
15
h
fe
h
ie
h
re
h
oe
f
T
C
ob
C
ib
NF
t
d
t
r
t
s
t
f
Small Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Output Admittance
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
50
1.0
0.1
1.0
250
-
-
-
-
-
-
-
Rev. A/AH
www.taitroncomponents.com
Page 2 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
*
Pulse
Test: Pulse Width<300µs, Duty Cycle<2%
Dimensions in mm
TO-92
Rev. A/AH
www.taitroncomponents.com
Page 3 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email:
taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
www.taitroncomponents.com
Page 4 of 4
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