BCW32LT1G
General Purpose
Transistors
NPN Silicon
Features
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•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
Symbol
P
D
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW/°C
°C/W
1
mW
mW/°C
°C/W
°C
D2
M
G
= Device Code
= Date Code*
= Pb−Free Package
D2 M
G
G
Value
Unit
mW
3
2
EMITTER
COLLECTOR
3
1
BASE
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BCW32LT1G
NSVBCW32LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2000
1
November, 2016 − Rev. 4
Publication Order Number:
BCW32LT1/D
BCW32LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0)
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100°C)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
−
−
−
−
100
10
nAdc
mAdc
32
32
5.0
−
−
−
−
−
−
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
Base −Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
h
FE
200
V
CE(sat)
−
V
BE(on)
0.55
−
0.70
−
0.25
Vdc
−
450
Vdc
−
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(I
E
= 0, V
CB
= 10 Vdc, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
obo
NF
−
−
−
−
4.0
10
pF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
I
C
= 1.0 mA
en, NOISE VOLTAGE (nV)
300
mA
BANDWIDTH = 1.0 Hz
R
S
= 0
In, NOISE CURRENT (pA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
2.0
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
30
mA
10
mA
I
C
= 1.0 mA
300
mA
100
mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
10
7.0
5.0
10
mA
3.0
100
mA
30
mA
Figure 1. Noise Voltage
Figure 2. Noise Current
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BCW32LT1G
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700
1k
BANDWIDTH = 1.0 Hz
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
500 700
1k
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as:
NF
+
20 log10
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
200 300
500 700
1k
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input.
n
(Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R = Source Resistance (W)
S
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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BCW32LT1G
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h FE, DC CURRENT GAIN
200
25°C
- 55°C
100
80
60
40
0.004 0.006 0.01
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
IC, COLLECTOR CURRENT (mA)
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
I
B
= 500
mA
400
mA
300
mA
0.6
60
200
mA
40
100
mA
20
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
V
BE(sat)
@ I
C
/I
B
= 10
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for I
C
/I
B
≤
h
FE
/2
25°C to 125°C
0
*q
VC
for V
CE(sat)
- 55°C to 25°C
- 0.8
25°C to 125°C
- 1.6
q
VB
for V
BE
- 2.4
0.1
0.2
- 55°C to 25°C
50
100
0.5
1.0 2.0
5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
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BCW32LT1G
TYPICAL DYNAMIC CHARACTERISTICS
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
J
= 25°C
f = 1.0 MHz
C
ob
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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