BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
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•
Low Threshold Voltage (V
GS(th)
: 0.85 V−1.5 V) Makes it Ideal for
Low Voltage Applications
•
Miniature SOT−23 Surface Mount Package Saves Board Space
•
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance,
Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
50
±
20
200
800
225
− 55 to 150
556
260
mW
°C
°C/W
°C
Unit
Vdc
Vdc
mA
1
2
200 mA, 50 V
R
DS(on)
= 3.5
W
N−Channel
3
1
2
3
MARKING
DIAGRAM
SOT−23
CASE 318
STYLE 21
J1 MG
G
1
J1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
BSS138LT1G
BVSS138LT1G
BSS138LT3G
BVSS138LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
January, 2018 − Rev. 11
Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, 25°C)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, 25°C)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, 150°C)
Gate−Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate−Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−to−Source On−Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= −40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
40
12
3.5
50
25
5.0
pF
V
GS(th)
r
DS(on)
−
−
g
fs
100
5.6
−
−
10
3.5
−
mmhos
0.85
−
1.5
Vdc
W
V
(BR)DSS
I
DSS
−
−
−
I
GSS
−
−
−
−
−
0.1
0.5
5.0
±0.1
mAdc
50
−
−
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
t
d(on)
t
d(off)
−
−
−
−
20
20
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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2
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
T
J
= 25°C
0.7
I D , DRAIN CURRENT (AMPS)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
V
GS
= 3.25 V
V
GS
= 3.0 V
V
GS
= 2.75 V
V
GS
= 2.5 V
I D , DRAIN CURRENT (AMPS)
V
GS
= 3.5 V
0.9
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
DS
= 10 V
- 55°C
25°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
-5
45
95
145
0.75
- 55
-30
V
GS
= 4.5 V
I
D
= 0.5 A
Vgs(th) , VARIANCE (VOLTS)
V
GS
= 10 V
I
D
= 0.8 A
1.125
1.25
Figure 2. Transfer Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
I
D
= 1.0 mA
1
0.875
-5
20
45
70
95
120
145
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
I
DSS
, DRAIN-TO-SOURCE LEAKAGE (A)
V
DS
= 40 V
T
J
= 25°C
8
1.0E-5
Figure 4. Threshold Voltage Variation
with Temperature
1.0E-6
150°C
6
1.0E-7
125°C
4
I
D
= 200 mA
2
1.0E-8
0
0
500
1000
1500
2000
2500
3000
Q
T
, TOTAL GATE CHARGE (pC)
1.0E-9
0
5
10
15
20
25
30
35
40
45
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Gate Charge
Figure 6. IDSS
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3
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
10
9
8
150°C
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.2
0.25
I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
V
GS
= 2.5 V
8
V
GS
= 2.75 V
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.2
0.25
I
D
, DRAIN CURRENT (AMPS)
25°C
150°C
-55°C
Figure 7. On−Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
V
GS
= 4.5 V
150°C
4.5
Figure 8. On−Resistance versus Drain Current
V
GS
= 10 V
4
3.5
3
2.5
2
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
150°C
25°C
-55°C
0.4
0.45
0.5
I
D
, DRAIN CURRENT (AMPS)
Figure 9. On−Resistance versus Drain Current
Figure 10. On−Resistance versus Drain
Current
120
100
V
GS
= 2.75 V
T
J
= 25°C
f = 1 MHz
1
I D , DIODE CURRENT (AMPS)
0.1
C, CAPACITANCE (pF)
T
J
= 150°C
25°C
-55°C
80
60
C
iss
40
20
C
oss
C
rss
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
5
10
15
20
25
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
Figure 12. Capacitance
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BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
1
T
A
= 25°C
V
GS
≤
10 V
1 ms
10 ms
0.1
I
DS
, DRAIN−TO−SOURCE CURRENT (A)
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
dc
0.001
0.1
100
Figure 13. Safe Operating Area
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