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BY550-1000

Description
SILICON RECTIFIER DIODES
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BY550-1000 Overview

SILICON RECTIFIER DIODES

BY550-1000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current300 A
Number of components1
Maximum operating temperature175 °C
Maximum output current5 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Base Number Matches1
BY550-50 ~ BY550-1000
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
DO - 201AD
0.21 (5.33)
0.19 (4.83)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 5.0 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
SYMBOL
V
RRM
V
RMS
V
DC
I
F
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
BY550 BY550 BY550 BY550 BY550 BY550
- 50
- 100
- 200
- 400
- 600
- 800
BY550
- 1000
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
50
35
50
100
70
100
200
140
200
400
280
400
5.0
300
1.1
20
50
50
18
600
420
600
800
560
800
1000
700
1000
Ta = 25
°C
Ta = 100
°C
Typical Junction Capacitance (Note1)
- 65 to + 175
- 65 to + 175
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005

BY550-1000 Related Products

BY550-1000 BY550-100 BY550-200 BY550-50 BY550-600 BY550-800 BY550-400 BY550-50_05
Description SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free -
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to -
Maker EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
Reach Compliance Code compliant compli compli compli compliant compliant compli -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1 V 1.1 V 1.1 V 1.1 V -
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A 300 A 300 A -
Number of components 1 1 1 1 1 1 1 -
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C -
Maximum output current 5 A 5 A 5 A 5 A 5 A 5 A 5 A -
Maximum repetitive peak reverse voltage 1000 V 100 V 200 V 50 V 600 V 800 V 400 V -
surface mount NO NO NO NO NO NO NO -

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