BY550-50_05 datasheet, PDF - EEWORLD Datasheet

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BY550-50_05: DescriptionSILICON RECTIFIER DIODES; File Size40KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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BY550-50_05 Overview

SILICON RECTIFIER DIODES

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BY550-50 ~ BY550-1000

PRV : 50 - 1000 Volts

Io : 5.0 Amperes

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

SILICON RECTIFIER DIODES

DO - 201AD

0.21 (5.33)

0.19 (4.83)

1.00 (25.4)

MIN.

0.375 (9.53)

0.285 (7.24)

MECHANICAL DATA :

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.929 grams

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 60°C

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I

F

= 5.0 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Typical Thermal Resistance (Note2)

Junction Temperature Range

Storage Temperature Range

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V

DC

SYMBOL

V

RRM

V

RMS

V

DC

I

F

I

FSM

V

F

I

R

I

R(H)

C

J

R

θ

JA

T

J

T

STG

BY550 BY550 BY550 BY550 BY550 BY550

- 50

- 100

- 200

- 400

- 600

- 800

BY550

- 1000

UNIT

V

A

V

µA

pF

°C/W

°C

50

35

50

100

70

100

200

140

200

400

280

400

5.0

300

1.1

20

50

18

600

420

600

800

560

800

1000

700

1000

Ta = 25

°C

Ta = 100

°C

Typical Junction Capacitance (Note1)

- 65 to + 175

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 02 : March 25, 2005

BY550-50_05 Related Products

	BY550-50_05	BY550-100	BY550-200	BY550-50	BY550-600	BY550-800	BY550-1000	BY550-400
Description	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	-	compli	compli	compli	compliant	compliant	compliant	compli
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.1 V	1.1 V	1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	-	300 A	300 A	300 A	300 A	300 A	300 A	300 A
Number of components	-	1	1	1	1	1	1	1
Maximum operating temperature	-	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	-	5 A	5 A	5 A	5 A	5 A	5 A	5 A
Maximum repetitive peak reverse voltage	-	100 V	200 V	50 V	600 V	800 V	1000 V	400 V
surface mount	-	NO	NO	NO	NO	NO	NO	NO
Maker	-	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]

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