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BYG20G

Description
1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214
CategoryDiscrete semiconductor    diode   
File Size130KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BYG20G Overview

1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214

BYG20G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionSMA, 2 PIN
Reach Compliance Codecompli
applicationULTRA FAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
Maximum reverse current1 µA
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYG20D - BYG20J
PRV : 200 - 600 Volts
Io : 1.5 Amperes
*
*
*
*
*
*
*
Glass passivated junction
Low profile package
Ideal for automated placement
Low reverse current
Soft recovery characteristics
Ultrafast reverse recovery time
Pb
/
RoHS
Free
ULTRAFAST AVALANCHE
RECTIFIERS
SMA
1.6
±
0.25
2.6
±
0.15
2.3
±
0.2
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise noted
.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current
Peak Forward Surge Current 10 ms single half
sine wave superimposed on rated load
Maximum Instantaneous
Forward Voltage
(1)
SYMBOL
BYG20D
5.3
±
0.35
1.6
±
0.25
4.2
±
0.25
FEATURES :
1.3
±
0.2
BYG20G
BYG20J
UNIT
V
RRM
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
R
ӨJL
(2)
200
400
1.5
30
1.3
1.4
1.0
10
75
25
150
20
- 55 to + 150
600
V
A
A
V
μA
ns
°C/W
°C/W
mJ
°C
at I
F
= 1 A, Tj = 25 °C
at I
F
= 1.5 A, Tj = 25 °C
at V
R
= V
RRM
, Tj = 25 °C
at V
R
= V
RRM
, Tj = 100 °C
Maximum DC Reverse Current
Maximum Reverse Recovery Time
( I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A)
Typical Thermal Resistance, Junction to Lead
Typical Thermal Resistance, Junction to Ambient
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1A, Tj = 25 °C
Operating Junction and Storage Temperature Range
Notes :
(1) Pulse test: 300
μs
pulse width, 1 % duty cycle
(2) Mounted on epoxy-glass hard tissue
R
ӨJA
E
R
T
J
, T
STG
Page 1 of 2
Rev. 03 :
September 18,
2008

BYG20G Related Products

BYG20G BYG20J BYG20D
Description 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction SMA, 2 PIN R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compli compli compli
application ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V 1.4 V
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 30 A 30 A 30 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 400 V 600 V 200 V
Maximum reverse current 1 µA 1 µA 1 µA
surface mount YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
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