TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYD57DA - BYD57VA
PRV : 200 - 1400 Volts
Io : 1.0 - 1.2 Amperes
FEATURES :
*
*
*
*
*
*
Glass passivated junction chip
High maximum operating temperature
Low leakage current
Excellent stability
Smallest surface mount rectifier outline
Pb / RoHS Free
ULTRA-FAST SOFT-RECOVERY
CONTROLLED AVALANCHE RECTIFIERS
SMA (DO-214AC)
5.0
±
0.15
4.5
±
0.15
1.1
±
0.3
1.2
±
0.2
2.1
±
0.2
2.6
±
0.15
0.2
±
0.07
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.067 gram
2.0
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I
R
= 0.1 mA
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)
Maximum Repetitive Peak Forward Current at Ttp = 85 °C
Maximum Forward Voltage at I
F
= 1.0 A ; T
J
= 25 °C
Maximum Reverse Current at V
R
=V
RRMmax
Maximum Reverse Recovery Time (Note 4)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 5)
Junction Temperature Range
Storage Temperature Range
T
J
= 25 °C
T
J
= 165 °C
SYMBOL
V
RRM
V
R
V
(BR)R-min
I
F(AV)
I
FSM
I
FRM
V
F
I
R
I
R(H)
Trr
R
th j-tp
R
th j-a
T
J
T
STG
BYD
57DA
BYD
57GA
BYD
57JA
BYD
BYD
BYD
BYD
57VA
57KA 57MA 57UA
UNIT
V
V
V
A
A
200
200
300
400
400
500
600
600
700
1.0
(1)
800
800
900
0.4
(2)
5
1000 1200 1400
1000 1200 1400
1100 1300 1500
1.2
(1)
8.5
3.6
5.0
100
30
30
150
- 65 to + 175
- 65 to + 175
75
11
2.3
A
V
μA
μA
150
ns
K/W
K/W
°C
°C
Notes :
(1) Ttp = 85 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6.
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6.
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; V
R
= V
RRMmax
(4) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μm.
Page 1 of 3
Rev. 00 : February 13, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYD57DA - BYD57VA )
FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD
CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE
2.0
FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD
CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE
2.0
BYD57DA to MA
BYD57UA to VA
AVERAGE FORWARD
CURRENT, I
F(AV)
(A)
1.2
AVERAGE FORWARD
CURRENT, I
F(AV)
(A)
0
40
80
120
160
200
1.6
1.6
1.2
0.8
0.8
0.4
0.4
0
0
0
40
80
120
160
200
TIE-POINT TEMPERATURE, Ttp (
°
C)
FIG.3 - MAXIMUM PERMISSIBLE AVERAGE FORWARD
CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE
AVERAGE FORWARD CURRENT, I
F(AV)
(A)
0.6
TIE-POINT TEMPERATURE, Ttp (
°
C)
FIG.4 - MAXIMUM PERMISSIBLE AVERAGE FORWARD
CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE
AVERAGE FORWARD CURRENT, I
F(AV)
(A)
0.6
BYD57DA to MA
0.5
BYD57UA to VA
0.4
0.4
0.3
0.2
0.2
0.1
0
0
40
80
120
160
200
0
0
40
80
120
160
200
AMBIENT TEMPERATURE, Tamp (
°
C)
FIG.5 - MAXIMUM STEADY STATE POWER DISSIPATION
AS A FUNCTION OF AVERAGE FORWARD CURRENT
3
AMBIENT TEMPERATURE, Tamp (
°
C)
FIG.6 - MAXIMUM STEADY STATE POWER DISSIPATION
AS A FUNCTION OF AVERAGE FORWARD CURRENT
6
POWER DISSIPATION, P
D
(W)
a =3 2.5
2
1.57 1.42
POWER DISSIPATION, P
D
(W)
BYD57UA to VA
5
4
a =3
2.5
2
1.57
1.42
2
3
2
1
BYD57DA to MA
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5
0
0
0.5
1
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5
0
0
0.4
0.8
1.2
1.6
2.0
AVERAGE FORWARD CURRENT, I
F(AV)
(A)
AVERAGE FORWARD CURRENT, I
F(AV)
(A)
Page 2 of 3
Rev. 00 : February 13, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYD57DA - BYD57VA )
FIG.7 - FORWARD CURRENT AS FUNCTION
OF FORWARD VOLTAGE
FIG.8 - FORWARD CURRENT AS FUNCTION
OF FORWARD VOLTAGE
4
4
BYD57DA to MA
BYD57UA to VA
FORWARD CURRENT, I
F
(A)
3
FORWARD CURRENT, I
F
(A)
T
J
= 25 °C
3
T
J
= 25 °C
2
2
1
1
0
0
2
4
6
8
0
0
1
2
3
4
FORWARD VOLTAGE, V
F
(V)
FORWARD VOLTAGE, V
F
(V)
FIG.9 - REVERSE CURRENT AS FUNCTION
OF JUNCTION TEMPERATURE
1000
REVERSE CURRENT, I
R
(μA)
100
V
R
=V
RRMmax
10
1
0
100
200
JUNCTION TEMPERATURE, T
J
( °C)
Page 3 of 3
Rev. 00 : February 13, 2008
stm32/stm8
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