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BYT52G

Description
0.85 A, 400 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYT52G Overview

0.85 A, 400 V, SILICON, SIGNAL DIODE

BYT52G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
BYT52A - BYT52M
PRV : 50 - 1000 Volts
Io : 1.4 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY RECTIFIERS
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current,
( tp = 10 ms, half sinewave)
Maximum Forward Voltage at I
F
= 1.0 A
Maximum Reverse Current
( V
R
= V
RRM
)
Maximum Reverse Recovery Time
(I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.)
Maximum Junction Ambient Thermal Resistance
( L = 10mm, T
L
= Constant )
Junction Temperature Range
Storage Temperature Range
T
J
T
STG
- 65 to + 175
- 65 to + 175
°C
°C
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
T
rr
R
thJA
BYT
52A
50
50
BYT
52B
100
100
BYT
52D
200
200
BYT
52G
400
400
BYT
52J
600
600
BYT
52K
800
800
BYT
52M
1000
1000
UNIT
V
V
A
A
V
µA
µA
ns
K/W
0.85 (on PC Board)
1.4 ( L = 10 mm, T
L
= 25°C)
50
1.3
10 (Tj = 25°C)
150 (Tj = 150°C)
200
45
Note :
(1) Reverse Recovery Test Conditions
Page 1 of 2
Rev. 03 : October 5, 2005

BYT52G Related Products

BYT52G BYT52B BYT52K BYT52A BYT52J BYT52D BYT52M
Description 0.85 A, 400 V, SILICON, SIGNAL DIODE 0.85 A, 100 V, SILICON, SIGNAL DIODE 0.85 A, 800 V, SILICON, SIGNAL DIODE 0.85 A, 50 V, SILICON, SIGNAL DIODE 0.85 A, 600 V, SILICON, SIGNAL DIODE 0.85 A, 200 V, SILICON, SIGNAL DIODE 0.85 A, 1000 V, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli compli compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
ECCN code - EAR99 EAR99 EAR99 EAR99 - -
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