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BYT56K

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYT56K Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE

BYT56K Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BYT56A - BYT56M
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY RECTIFIERS
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current,
( tp = 10 ms, half sinewave)
Maximum Forward Voltage at I
F
= 3 A
Maximum Reverse Current
( V
R
= V
RRM
)
Maximum Reverse Recovery Time
(I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.)
Maximum Junction Ambient Thermal Resistance
( L = 10mm, T
L
= Constant )
Junction Temperature Range
Storage Temperature Range
T
J
T
STG
- 55 to + 175
- 55 to + 175
°C
°C
SYMBOL
V
RRM
V
R
I
F(AV)
BYT
56A
50
50
BYT
56B
100
100
BYT
56D
200
200
BYT
56G
400
400
BYT
56J
600
600
BYT
56K
800
800
BYT
56M
1000
1000
UNIT
V
V
A
1.5 (on PC Board)
3.0 ( L = 10 mm, T
L
= 25°C)
I
FSM
V
F
I
R
I
R(H)
T
rr
R
thJA
80
1.4
5 (Tj = 25°C)
150 (Tj = 150°C)
100
25
A
V
µA
µA
ns
K/W
Note :
(1) Reverse Recovery Test Conditions
Page 1 of 2
Rev. 03 : October 5, 2005

BYT56K Related Products

BYT56K BYT56A BYT56J BYT56D BYT56M BYT56B BYT56G
Description 1.5 A, 800 V, SILICON, RECTIFIER DIODE 1.5 A, 50 V, SILICON, RECTIFIER DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compliant compli compliant compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A 80 A 80 A 80 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 800 V 50 V 600 V 200 V 1000 V 100 V 400 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
package instruction O-PALF-W2 - - - O-PALF-W2 O-PALF-W2 O-PALF-W2
Base Number Matches 1 1 - 1 1 - -
Maker - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
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