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BYW56

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size41KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYW56 Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AP

BYW56 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompli
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current1 µA
Maximum reverse recovery time3 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BYW54 - BYW56
PRV : 600 - 1000Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
AVALANCHE RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Crest Working Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I
R
= 0.1 mA
Maximum Average Forward Current
T
tp
= 45
°C
(Note 1)
Maximum Non-Repetitive Peak Forward Surge Current
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage at I
F
= 1.0 A
Maximum Reverse Current at V
R
= V
RRM
Maximum Reverse Current at V
R
= V
RRM
, Tj = 165
°C
Typical Reverse Recovery Time (Note 2)
Thermal Resistance - Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Lead Length 10 mm.
(2) Test Conditions : I
F
= 0.5 A to I
R
= 1 A ; measured at Irr = 0.25 A
SYMBOL
V
RRM
V
RWM
V
R
V
(BR)R-min.
I
F(AV)
I
FSM
I
FRM
V
F
I
R
I
R(H)
Trr
R
θ
JA
T
J
T
STG
BYW54
600
600
600
650
BYW55
800
800
800
900
2.0
50
12
1.0
1.0
150
3.0
100
- 65 to + 175
- 65 to + 175
BYW56
1000
1000
1000
1300
UNIT
V
V
V
V
A
A
A
V
µA
µA
µs
K/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005

BYW56 Related Products

BYW56 BYW55 BYW54
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AP 2 A, 800 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 1000 V 800 V 600 V
Maximum reverse current 1 µA 1 µA 1 µA
Maximum reverse recovery time 3 µs 3 µs 3 µs
surface mount NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Base Number Matches 1 1 1
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
package instruction O-PALF-W2 O-PALF-W2 -
Is Samacsys N N -
Is it lead-free? - Lead free Lead free
JEDEC-95 code - DO-41 DO-41
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