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BZD27-CXXA

Description
VOLTAGE REGULATOR DIODES
File Size132KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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BZD27-CXXA Overview

VOLTAGE REGULATOR DIODES

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BZD27-CxxA Series
FEATURES :
* Excellent stability
* Zener working voltage range: 3.6 to 270 V for 46 types
* Transient suppressor stand-off voltage range:
6.2 to 430 V for 45 types
* High maximum operating temperature
* Low leakage current
VOLTAGE REGULATOR DIODES
SMA (DO-214AC)
5.0
±
0.15
4.5
±
0.15
1.1
±
0.3
1.2
±
0.2
2.1
±
0.2
2.6
±
0.15
0.2
±
0.07
* Pb / RoHS Free
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.067 gram
2.0
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS
Parameter
Total Power dissipation
BZD27-C3V6A to BZD27-C6V8A
BZD27-C7V5A to BZD27-C510A
Total Power dissipation
BZD27-C3V6A to BZD27-C6V8A
BZD27-C7V5A to BZD27-C510A
Non-repetitive peak reverse
power dissipation
Non-repetitive peak reverse power
dissipation (BZD27-C7V5A to -C510A)
Forward voltage
Junction and Storage Temperature Range
BZD27-C3V6A to BZD27-C6V8A
BZD27-C7V5A to BZD27-C510A
Symbol
P
tot
Condition
Ttp = 105 °C; see Fog. 1 and 2
Min.
-
-
Max.
1.7
2.3
0.8
0.8
300
150
1.2
+175
+150
Unit
W
P
tot
PCB mounted
Tamb = 60 °C, see Fig. 1
Tamb = 55 °C, see Fig. 2
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 5
10/1000 µs exponential pulse (see Fig. 5)
Tj = 25°C prior to surge
I
F
= 0.2 A; Tj = 25 °C; see Fig. 3
-
-
-
-
-
-65
-65
W
P
ZSM
P
RSM
V
F
T
J
, T
STG
W
W
V
°C
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
BZD27-C3V6A to BZD27-C6V8A
BZD27-C7V5A to BZD27-C510A
Thermal resistance from junction to ambient
BZD27-C3V6A to BZD27-C6V8A
BZD27-C7V5A to BZD27-C510A
Symbol
R
th j-tp
Condition
Value
41
20
Unit
K/W
R
th j-a
Note 1
144
119
K/W
Note :
(1) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer µm on an must space.
≥40
Page 1 of 4
Rev. 00 : February 13, 2008
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