LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
P
BSS76
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
• Hermetic Metal Package
• Screening Options Available
0.48 (0.019)
0.41 (0.016)
dia.
12.7 (0.500)
min.
APPLICATIONS:
All Semelab hermetically sealed prod-
ucts can be processed in accordance
with the requirements of BS, CECC
and JAN specifications
3
2
1
2.54 (0.100)
Nom.
TO–18 (TO-206AA) PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
, T
STG
R
θJC
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction – Case
-300V
-300V
-5V
-0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5747
Issue 1
LAB
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Parameter
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Test Conditions
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
B
= 0
I
C
= 0
I
C
= -1mA
I
C
= -10mA
I
C
= -30mA
I
C
= -100mA
I
B
= -1mA
I
B
= -3mA
I
B
= -1mA
I
B
= -3mA
V
CE
= -20V
V
CB
= -20V
V
EB
= -0.5V
I
C
= -50mA
I
C
= -50mA
30
35
35
45
50
55
40
-0.15
-0.25
-0.3
-0.4
-0.8
-0.9
V
V
150
—
Min.
-300
-300
-6
-50
-500
-50
nA
V
Typ.
Max.
Unit
SEME
BSS76
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage I
C
= -10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
I
C
= -100µA
I
E
= 100µA
V
CB
= -250V
V
CE
= -300V
V
BE
= -5V
V
CE
= -1V
ON CHARACTERISTICS
V
CE
= -10V
V
CE
= -10V
V
CE
= -10V
V
CE(sat)
V
BE(sat)
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
I
C
= -10mA
I
C
= -30mA
I
C
= -10mA
I
C
= -30mA
I
C
= -20mA
f = 20MHz
I
E
= 0
f = 1MHz
I
C
= 0
f = 1MHz
I
B1
= -10mA
V
CC
= -100V
I
B2
= -10mA
V
CC
= -100V
h
FE
DC Current Gain
DYNAMIC CHARACTERISTICS
f
T
C
ob
C
ib
t
on
t
off
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Turn–On Time
Turn–Off Time
50
110
3.5
pF
45
100
ns
400
200
MHz
* Pulse Test: t
p
≤
300µs , d
≤
2%.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5747
Issue 1
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