BUL47A
MECHANICAL DATA
Dimensions in mm
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
•
•
•
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
MILITARY AND HI–REL OPTIONS
EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
TO3 (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Case is Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
R
th
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Thermal Resistance (junction-case)
600V
300V
10V
40A
200W
–65 to 175°C
0.75°CW
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document 3880
Issue 1
BUL47A
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Test Conditions
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
T
C
= 125°C
I
B
= 0
V
EB
= 5V
I
C
= 1A
V
CE
= 300V
I
C
= 0
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
I
B
= 6A
I
B
= 1A
V
CE
= 4V
f = 10MHz
Min.
300
600
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 100mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 600V
V
10
100
100
10
100
µA
µA
µA
15
20
25
0.7
1.1
V
—
h
FE*
V
CE(sat)*
V
BE(sat)*
DC Current Gain
I
C
= 10A
I
C
= 25A
Collector – Emitter Saturation Voltage I
C
= 30A
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
I
C
= 10A
I
C
= 100
f = 10MHz
V
CB
= 20V
f
t
C
ob
Transition Frequency
Output Capacitance
20
260
MHz
pF
* Pulse test t
p
= 300µs ,
δ
< 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document 3880
Issue 1
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