BU326A datasheet, PDF - EEWORLD Datasheet

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BU326A: DescriptionPower Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]; Environmental Compliance

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Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

BU326A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	CDIL[Continental Device India Pvt. Ltd.]
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	75 W
Maximum power dissipation(Abs)	75 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	6 MHz
VCEsat-Max	3 V

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Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	incompatible	conform to	conform to
Reach Compliance Code	compliant	compli	compli	compli	compli	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	6 A	5 A	5 A	5 A	6 A	5 A	5 A
Collector-emitter maximum voltage	400 V	800 V	800 V	600 V	600 V	700 V	700 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	9	15	8	8	2.5	2.25
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	75 W	50 W	50 W	50 W	50 W	80 W	13 W
Maximum power dissipation(Abs)	75 W	50 W	50 W	50 W	50 W	13 W	12.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	3 V	1 V	1 V	5 V	5 V	5 V	5 V
Is it lead-free?	Contains lead	-	-	Contains lead	Contains lead	Contains lead	Contains lead
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	-
Maximum operating temperature	200 °C	-	-	140 °C	140 °C	115 °C	115 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Nominal transition frequency (fT)	6 MHz	-	-	4 MHz	3 MHz	4 MHz	4 MHz
JESD-609 code	-	e0	e0	e0	e0	-	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Base Number Matches	-	1	1	1	1	1	-

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