K4S561632B-TP1LT datasheet, PDF

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K4S561632B-TP1LT: DescriptionSynchronous DRAM, 16MX16, 6ns, CMOS, PDSO54; Categorystorage storage; File Size48KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S561632B-TP1LT Overview

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54

K4S561632B-TP1LT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	TSOP, TSOP54,.46,32
Reach Compliance Code	unknown
Maximum access time	6 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	54
word count	16777216 words
character code	16000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.21 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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Preliminary

K4S561632B-TI(P)

CMOS SDRAM

256Mbit SDRAM

4M x 16bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.0

January 2001

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.0 Jan. 2001

K4S561632B-TP1LT Related Products

	K4S561632B-TP1LT	K4S561632B-TP1HT	K4S561632B-TP75T	K4S561632B-TI75T	K4S561632B-TI1HT
Description	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	6 ns	6 ns	5.4 ns	5.4 ns	6 ns
Maximum clock frequency (fCLK)	100 MHz	100 MHz	133 MHz	133 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	e0	e0	e0	e0
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16
Humidity sensitivity level	3	3	3	3	3
Number of terminals	54	54	54	54	54
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	16MX16	16MX16	16MX16	16MX16	16MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.21 mA	0.21 mA	0.22 mA	0.22 mA	0.21 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40
Maker	SAMSUNG	-	-	SAMSUNG	SAMSUNG

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