INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC1730
DESCRIPTION
·Low
Base Time Constant;
r
bb’ • CC
= 10 ps TYP.
·High
Gain Bandwidth Product
f
T
= 1100 MHz TYP.
·Low
Output Capacitance;
C
OB
= 1.5 pF Max.
APPLICATIONS
·Designed
for TV VHF, UHF tuner oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.25
W
T
J
Junction Temperature
125
℃
T
stg
Storage Temperature Range
-55~125
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1730
TYP.
MAX
UNIT
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10mA ; I
B
= 1mA
0.5
V
I
CBO
Collector Cutoff Current
V
CB
= 12V; I
E
= 0
0.1
μA
h
FE
DC Current Gain
I
C
= 5mA ; V
CE
= 10V
40
180
f
T
Current-Gain—Bandwidth Product
I
E
= -5mA ; V
CE
= 10V
800
1100
MHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V; f= 1.0MHz
1.5
pF
r
bb’
• C
C
Base Time Constant
V
CE
= 10V,I
E
= -5mA,f = 31.9 MHz
10
15
ps
h
FE
Classifications
Marking
h
FE
M
40-80
L
60-120
K
90-180
isc Website：www.iscsemi.cn
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