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2SC1730L

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size63KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC1730L Overview

Transistor

2SC1730L Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC1730
DESCRIPTION
·Low
Base Time Constant;
r
bb’ • CC
= 10 ps TYP.
·High
Gain Bandwidth Product
f
T
= 1100 MHz TYP.
·Low
Output Capacitance;
C
OB
= 1.5 pF Max.
APPLICATIONS
·Designed
for TV VHF, UHF tuner oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.25
W
T
J
Junction Temperature
125
T
stg
Storage Temperature Range
-55~125
isc Website:www.iscsemi.cn

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Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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