EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS116

Description
0.2 A, 75 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size69KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS116 Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS116 - - View Buy Now

BAS116 Overview

0.2 A, 75 V, SILICON, SIGNAL DIODE

BAS116 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys DescriptiInfineon BAS116, SMT Diode, 80V 250mA, 1.5μs, 3-Pin SOT-23
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.37 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAS116...
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAS116
!

Type
BAS116
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Package
SOT23
Configuration
single
Symbol
V
R
V
RM
I
F
I
FSM
4.5
0.5
P
tot
T
j
T
stg
370
150
-65 ... 150
Value
80
85
250
Marking
JVs
Unit
V
mA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
Total power dissipation
T
S
54°C
Junction temperature
Storage temperature
mW
°C
Thermal Resistance
Parameter
Junction - soldering point
2)
BAS116
1
Pb-containing
Symbol
R
thJS
Value
260
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

BAS116 Related Products

BAS116 BAS116_07
Description 0.2 A, 75 V, SILICON, SIGNAL DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE
Diode component materials SILICON silicon
Diode type RECTIFIER DIODE Signal diode
Number of components 1 1
Number of terminals 3 3
Maximum repetitive peak reverse voltage 85 V 75 V
Maximum reverse recovery time 3 µs 0.0060 us
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL pair

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2043  2351  328  124  88  42  48  7  3  2 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号