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BAS116_07

Description
0.2 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size69KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAS116_07 Overview

0.2 A, 75 V, SILICON, SIGNAL DIODE

BAS116_07 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.2000 A
BAS116...
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAS116
!

Type
BAS116
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Package
SOT23
Configuration
single
Symbol
V
R
V
RM
I
F
I
FSM
4.5
0.5
P
tot
T
j
T
stg
370
150
-65 ... 150
Value
80
85
250
Marking
JVs
Unit
V
mA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
Total power dissipation
T
S
54°C
Junction temperature
Storage temperature
mW
°C
Thermal Resistance
Parameter
Junction - soldering point
2)
BAS116
1
Pb-containing
Symbol
R
thJS
Value
260
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

BAS116_07 Related Products

BAS116_07 BAS116
Description 0.2 A, 75 V, SILICON, SIGNAL DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 1 1
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location pair DUAL
Diode component materials silicon SILICON
Diode type Signal diode RECTIFIER DIODE
Maximum reverse recovery time 0.0060 us 3 µs
Maximum repetitive peak reverse voltage 75 V 85 V
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